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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5881 2N5882 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER 2N5881 VCBO Collector-base voltage 2N5882 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25ae 2N5881 Open base 2N5882 Open collector 80 5 15 30 5 160 150 -65~200 ae ae V A A A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT VCEO VEBO IC ICM IB PD Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ae /W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5881 2N5882 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5881 IC=0.2A ;IB=0 2N5882 IC=7A;IB=0.7A IC=15A;IB=3.75A IC=15A;IB=3.75A IC=6A ; VCE=4V VCB=ratedVCBO; IB=0 2N5881 ICEO Collector cut-off current 2N5882 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency VCE=40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150ae VEB=5V; IC=0 IC=2A ; VCE=4V IC=6A ; VCE=4V IC=15A ; VCE=4V IC=1A ; VCE=10V 35 20 4 4 MHz 100 0.5 5.0 1.0 mA mA VCE=30V; IB=0 1.0 mA 80 1.0 4.0 2.5 1.5 0.5 V V V V mA CONDITIONS MIN 60 V TYP. MAX UNIT SYMBOL VCEO(sus) Collector-emitter sustaining voltage VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter on voltage Collector cut-off current JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N5881 2N5882 Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) JMnic |
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